 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington Power Transistor) 2SD1140 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications * * High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 30 10 1.5 50 900 150 -55 to 150 Unit V V V A mA mW C C JEDEC JEITA TO-92MOD Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-5J1A temperature/current/voltage and the significant change in Weight: 0.36 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit COLLECTOR BASE EMITTER 1 2006-11-21 2SD1140 Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) ton IB1 Test Condition VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 150 mA IC = 1 A, IB = 1 mA IC = 1 A, IB = 1 mA Min 30 4000 Typ. Max 10 10 1.5 2.2 V V Unit A A V Turn-on time 20 s Input Output 15 0.2 Switching time IB2 Storage time tstg 0.6 s VCC = 15 V Fall time tf IB1 = -IB2 = 1 mA, duty cycle 1% 0.3 Marking D1140 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-21 2SD1140 IC - VCE 600 Common emitter 500 Ta = 25C 60 500 600 Common emitter Ta = 100C IC - VCE (mA) (mA) 35 30 25 Collector current IC 40 300 30 200 20 100 IB = 10 A 0 1 2 3 4 5 6 Collector current IC 400 50 400 300 20 15 10 200 100 IB = 5 A 0 1 2 3 4 5 6 0 0 0 0 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) IC - VCE 600 Common emitter 500 Ta = -50C 160 50000 30000 100000 hFE - IC Common emitter VCE = 2 V (mA) DC current gain hFE 140 400 120 100 80 200 60 40 100 IB = 20 A 0 1 2 3 4 5 6 Collector current IC Ta = 100C 10000 5000 3000 -50 25 300 1000 500 300 0.003 0.01 0.03 0.1 0.3 1 0 0 Collector-emitter voltage VCE (V) Collector current IC (A) IC - VBE 1.0 Common emitter VCE (sat) - IC Collector-emitter saturation voltage VCE (sat) (V) Common emitter 5 3 IC/IB = 1000 VCE = 2 V Collector current IC (A) 10 0.8 0.6 1 0.5 0.3 Ta = -50C 0.4 Ta = 100C 25 -50 100 25 0.2 0.1 0.003 0.01 0.03 0.1 0.3 1 0 0 0.4 0.8 1.2 1.6 2.0 2.4 Collector current IC (A) Base-emitter voltage VBE (V) 3 2006-11-21 2SD1140 VBE (sat) - IC Base-emitter saturation voltage VBE (sat) (V) 10 5 3 Ta = -50C 1 0.5 0.3 25 100 IC/IB = 1000 PC - Ta 1.0 (W) Collector power dissipation PC 0.8 0.6 0.4 3 0.2 Common emitter 0.1 0.002 0.01 0.03 0.1 0.3 1 Collector current IC (A) 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) Safe Operating Area 3000 IC max (pulsed)* IC max (continuous) 1000 10 s* (mA) 500 300 Collector current IC 100 s* 1 ms* 10 ms* 300 ms* DC operation (Ta = 25C) 2 s* 100 50 30 *: Single nonrepetitive pulse Ta = 25C Curves must be derated linearly with increase in temperature. 1 3 10 10 0.5 VCEO max 30 Collector-emitter voltage VCE (V) 4 2006-11-21 2SD1140 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-21 |
Price & Availability of 2SD114006
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |